Vacuum evaporation, deposition, sputtering, oxidation and metallization processes

Carrier analysis, CVD-TiN gates and their effects on the properties of insulating films, fabrication and retention of a205 films at low temperatures, fabrication of PTFE low dielectric films, fabrication and evaluation of Zr2, SrZr03 films, and excimer laser annealing Analyze effects with annealing, polysilicon solar cells, etc.

Microstructures and Optical Constants of Alumina Membranes Prepared by High-Frequency Oxygen Plasma [Journal] / Shi Shouhua / / Vacuum Science, Seven Technical Journal. One 2002, 22(4). 303 ~ 306 (L> Evaluation of Preparation Technology of Zinc Oxide Thin Film [Acta Sec.] / Liu Kun// Vacuum Science and detailed introduction of various methods for preparing zinc oxide thin films, including magnetron sputtering, chemical vapor deposition, spray pyrolysis Method, sol-gel method, laser pulse deposition method, molecular beam epitaxy method, atomic layer epitaxy method.

The mechanism of these methods, the deposition conditions, the desired reactants, and the properties of the resulting film are described. Discussed and compared the advantages and disadvantages of various methods and the possibility of applying them to devices and industrial production. References 42 Application of High-Density Plasma Sources for VLSI Processes Journal of Vacuum Science and Technology. One 2002, 22(4). -274-28KL) This article briefly introduced the plasma generation method and the traditional RF capacitively coupled plasma source. The working principles and structural highlights of several new high-density plasma sources, such as electron cyclotron resonance plasma (ECR), inductively coupled plasma (ICP), and spiral wave plasma (HWP), were analyzed and discussed, and the operating parameters were discussed. Compare it. Finally, the latest research progress on plasma confinement and device damage in high-density plasma processing is introduced.

Study on the Electrical Properties of Polysilicon Thin Films Prepared by Ref. 20 Microwave Annealing[期刊]/Study on the Preparation of BaTi03 Thick Films by Rao Chung Wet Polymerization[期刊]/周东祥//pressure studies the addition of acrylamide organic monomers to BaTiO 3 water slurries In-situ polymerization to form polyacrylamide produces a thick film. The flexibility of the green body is improved by adding glycerol as a plasticizer. The experimental results show that due to the good homogeneity of the prepared slurry, the thick film microstructure formed by in-situ polymerization is uniform and the electrical properties are excellent. Study on Growth and Surface Defects of Silicon Carbide Heteroepitaxial Thin Films [Journal of] / Wang Jianping / / Journal of Xidian University. One 2002, 29(4). Study on Growth and Properties of 465-469(K)MiCdInzTq Crystals [I]/Chang Yongqin Sealing Technology of Oxygen-Free Copper and 95% Al2O3 Ceramics [Ch.]/Chen Yong//True 0913 Vacuum Evaporation, Deposition, Sputtering , , and metallization process of non-hollow shallow channel isolated tetraethoxysilane (TEOS) fillers for photochromic and photoelectron spectroscopy of 18-alkyl substituted spiropyran films prepared by pulse vacuum evaporation [J]/Ji Zhenguo//Vacuum Journal of Science and Technology An 18-alkyl-substituted spiropyran film was deposited on a glass slide by vacuum evaporation. The photochromic properties of the film and the change of the molecular structure before and after the discoloration were investigated by optical absorption and photoelectron spectroscopy. The experimental results show that the 18-alkyl substituted spiropyran films deposited by vacuum evaporation have good photochromic properties, and obvious photochromic reactions can occur under ultraviolet light irradiation. Photoelectron Spectroscopy: After UV irradiation, the photoelectron peaks of Nls and 01s changed significantly, indicating that the molecular structure changed after UV irradiation, which led to the redistribution of charge within the molecule. In addition, the oxygen content increases after ultraviolet irradiation, which is due to the increase in the adsorption capacity of water vapor on the surface of the film after ultraviolet irradiation. The preparation of ZnO thin films and the study of their luminescent properties [Journal] / Mei Zengxia / / RF magnetron sputtering was used to deposit zinc oxide thin films on quartz substrates. The XRD curves, absorption spectra and photoluminescence spectra of the samples were measured at room temperature, and the effects of oxygen and argon on the preparation of the films were investigated. As can be seen from XRDi, the sample has a better crystalline state. In addition, the sample has a strong absorption in the UV, and its photoluminescence is also a strong UV emission, indicating that the inter-band transition dominates. The above results show that the ZnO thin films prepared by the sputtering method have better crystal quality and improved zinc-rich state. ZnSe epitaxial growth on Si substrate with low-pressure MOCVD [Actas]/Zhao Xiao negative bias on the beryllium magnetron sputtering ion plating Al film structure research / Lu Feng / / vacuum. One 2002, (3). In this paper, the process of preparing ZAO thin films by DC magnetron reactive sputtering was analyzed in detail, and the effects of deposition temperature, oxygen partial pressure, A1 containing fi, and target distance on the resistivity and visible light transmittance of ZAO thin films were investigated. . Study on Optical Properties of Highly Transparent, Flexible, and Low Emission Films of ITO-Ag [Page ]/The Latest Developments and Applications of Large Area Reactive Sputtering Techniques [Issue] / Stanford SPM nanolithography for 0961 plate making, lithography, etching and masking processes Study on the Preparation of Nanostructures on Ti Surface by the Etching Method [Journal]/Shen Ziyong//The Journal of Vacuum Science and Technology In 2002, Ti2 nanostructures were prepared on the surface of Ti film by inducing a localized oxidation reaction with a conductive atomic force microscope (AFM) tip. The experimental results show that the oxidation threshold of the Ti film is -7 volts, and the minimum line width of the prepared TiO2 nanowires reaches 1 nm. The height and width of the TiO2 nanowires increase with the bias voltage of the needle tip. Under optimized etch conditions, a patterned 1 structure was prepared by controlling the tip bias and scanning. This study shows that the nano-etching technology based on conductive AFM will become an important tool for constructing nano-electronic devices. Sensitivity of lithography in the 16th micro-line processing [Guangdong] / Chen Dongshi / / micro-location of a variety of proven lithography accuracy assurance methods, and analysis of the method to further improve the accuracy of lithography. Reference 5 uses an external constant current source to calibrate the implanter's fi [Review]/ Xie Yiqiang A precise photoresist profile simulation algorithm for fast OPC [Experiment] / 0930 Soldering and Joining Process AIN Ceramics Di-i-Ag- Cu Active Sealing Technology [Published] / Lu Yanping / / True flip-chip bump material and pad metallization [Journal] / Guo Zhiyang / / Microfabricated gold ball soldering process quality fl statistical control] Liu Xin//Micro-electronics Non-uniform Distribution Double Sided SMT and PBGA Post-weld Collapse Height Control [Edition] / Li Yuanshan // Computer Engineering and Science. One 2002, 24 (3). Statistical Analysis and Evaluation of Thermal Fatigue Life for ―98~100(D) CCGA Solder Joints/Huang Yuyue//Journal of Guilin University of Electronic Technology.2002,22(3).—3135(D) Solder Joint Pattern of CCGA Solder Joints The parameters and the thermal fatigue life were subjected to the orthogonal regression analysis, and the relationship between the main parameters of the CCGA solder joint morphology and the thermal fatigue life was obtained.The relationship between the obtained parameters of the solder joint morphology and the thermal fatigue life was used to optimize the program. The solder joint morphology based on the solder joint thermal reliability was evaluated and optimized, and the optimized solder joint morphological parameters were obtained.5 BGA Technology and Quality Control [New]/Xingfei//Electronics Industry-Oriented Advanced Packaging Devices Placement [Journal] / Editorial Department / / Electronics

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