Scientists prepare monodomain multiferroic BiFeO3 thin films

At present, the use of electric field to control the lattice, carriers, orbits and spins of the material is an effective method to fabricate low energy consumption, multifunctional and green nanoelectronic devices. The existence of ordered parameters and inherent coupling makes the multiferroic material become the focus of current research. Of the many multiferroic systems, BiFeO3 (BFO) is one of the most widely studied and promising ones. G-type antiferromagnetic properties of larger ferromagnetic polarization and high transition temperature make it applicable to non-volatile logic and memory elements. Its unique properties provide an excellent platform for regulating materials to obtain new properties under electrical excitation.

Recently, Ying-Hao Chu research team from National Chiao Tung University in Taiwan has prepared a single-domain BiFeO3 thin film with both magnetic and ferroelectric properties and studied its properties. Relevant research findings were published online September 1 in Single-domain multiferroic BiFeO3 films, Nat. Commun., 2016, DOI: 10.1038 / ncomms12712.

BiFeO3 offers the possibility of making new functional materials due to its strong antiferromagnetic and ferroelectric properties at room temperature. However, the multidomains that the material has hinder the understanding of the research and mechanism of the nature of the material itself. In this work, the authors used a pulsed laser deposition method to grow BiFeO3 thin films on a single crystal substrate. The experimental results show that the films have single-domain structural characteristics and exhibit good magnetic and ferroelectric properties. Further analysis of the thin film revealed that the antiferromagnetic axis along the crystallographic b axis and ferroelectric polarization along the crystallographic c axis. This reveals that the skewed ferromagnetic moment is due to the Dzyaloshinskii Moriya effect acting parallel to the aa axis. In addition, studies on the Co / BiFeO3 heterojunction prove that the ferromagnetic moment of the Co film is related to the bias magnetic moment of BiFeO3.

BiFeO3 Thin Film Ferroelectric Properties of Multidomain and Monodomain, Source: Nature Communications

This work provides a novel perspective for understanding single domains and their internal interactions in BiFeO3 thin films and points the way to the design and fabrication of new types of functional electronic devices.

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